PDS6964 - N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

60V,6.5A, RDS(ON) =17mΩ @VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDS6964 n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDS6964
Manufacturer	Potens semiconductor
File Size	435.51 KB
Description	N-Channel MOSFETs
Datasheet	PDS6964 Datasheet

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60V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration DD DD S S SG G D S PDS6964 BVDSS 60V RDSON 17m ID 6.5A Features  60V,6.