Datasheet Summary
60V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
SOP8 Pin Configuration
DDDD
SS SG
BVDSS 60V
RDSON 8.8m
ID 14A
Features
- 60V,14A, RDS(ON) =8.8mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- Green Device Available
Applications
- Networking
- Load Switch
- LED applications
- Quick Charger...