PSBD2FD20V1H
PSBD2FD20V1H is Schoktty Barrier Diode manufactured by Prisemi.
Feature
- Forward Current: 1A
- Reverse voltage: 20V
- Low forward voltage
- Low leakage current
- Trench MOS barrier Schottky technology
- Ultra Small mold type. (DFN1006-2L)
PSBD2FD20V1H Low VF Schoktty Barrier Diode
DFN1006-2L (Bottom View)
Applications
- Low current rectification
- Voltage clamping
- Protection circuits
- Ultra high-speed switching
Mechanical Characteristics
- Mounting position: Any
- Qualified max reflow temperature:260℃
- Device meets MSL 1 requirements
- DFN1006-2L without plating
Electrical characteristics per line@25℃
Parameter
Forward voltage Forward voltage Forward voltage Forward voltage Reverse current
Junction Capacitance
Symbol
VF VF VF VF IR
Min.
- -
Typ.
0.31 0.38 0.45 0.51
- 90
Pin 1
Pin 2
Circuit Diagram
Marking (Top View)
Max.
0.36 0.43 0.50 0.56 50
- Unit
V V V V u A p...
