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Feature
Ultra Small mold type. (DFN1006-2L) Low IR High reliability.
Applications
Low current rectification
PSBD2FD40V1HA Schottky Barrier Diode
DFN1006-2L(Bottom View)
Construction
Silicon epitaxial planar
Mechanical Characteristics
Mounting position: Any Device meets MSL 1 requirements Qualified max reflow temperature:260℃ DFN1006-2L without plating
Electrical characteristics per line@25℃
Parameter
Forward voltage Forward voltage Forward voltage Reverse current Junction Capacitance
Symbol
VF VF VF IR Cj
Min.
-
Typ.
0.38 0.48 0.57
84
Pin 1
Pin 2
Circuit Diagram
5S
Marking (Top View)
Max.
0.42 0.52 0.62 0.05
-
Unit
V V V mA pF
Conditions
IF=100mA IF=500mA
IF=1A VR=40V VR=0V f =1MHz
Rev.06.1
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