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Feature
Ultra Small mold type. (DFN1006-2L) Low IR High reliability.
Applications
Low current rectification
Construction
Silicon epitaxial planar
Mechanical Characteristics
Mounting position: Any Device meets MSL 1 requirements Qualified max reflow temperature:260℃ DFN1006-2L without plating
PSBD2FD40V1H Schottky Barrier Diode
DFN1006-2L(Bottom View)
Pin 1
Pin 2
Circuit Diagram
5S
Marking (Top View)
Electrical characteristics per line@25℃
Parameter
Forward voltage Forward voltage Forward voltage Reverse current Reverse current Junction Capacitance
Symbol
VF VF VF IR IR Cj
Min.
-
Typ.
0.35 0.45 0.55
90
Rev.06.9
1
Max.
0.40 0.50 0.60
3 0.1
-
Unit
V V V µA mA pF
Conditions
IF=100mA IF=500mA
IF=1A VR=10V VR=40V VR=0V f =1MHz
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PSBD2FD40V1H Datasheet
