PSBD2FD40V1H
PSBD2FD40V1H is Schottky Barrier Diode manufactured by Prisemi.
Feature
- Ultra Small mold type. (DFN1006-2L)
- Low IR
- High reliability.
Applications
- Low current rectification
Construction
- Silicon epitaxial planar
Mechanical Characteristics
- Mounting position: Any
- Device meets MSL 1 requirements
- Qualified max reflow temperature:260℃
- DFN1006-2L without plating
PSBD2FD40V1H Schottky Barrier Diode
DFN1006-2L(Bottom View)
Pin 1
Pin 2
Circuit Diagram
5S
Marking (Top View)
Electrical characteristics per line@25℃
Parameter
Forward voltage Forward voltage Forward voltage Reverse current Reverse current Junction Capacitance
Symbol
VF VF VF IR IR Cj
Min.
- Typ.
0.35 0.45 0.55
Rev.06.9
Max.
0.40 0.50 0.60
3 0.1
- Unit
V V V µA m A p F
Conditions
IF=100m A IF=500m A
IF=1A VR=10V VR=40V VR=0V f =1MHz
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