QPA1010D Datasheet | Qorvo

-  11.0 GHz 15 W Ga N Power Amplifier Product Description Qorvo’s QPA1010D is a X-band high power MMIC amplifier fabricated on Qorvo’s production 0.15um Ga N on Si C process (QGa N15). The QPA1010D operates from 7.9 - 11 GHz and typically provides 15 W saturated output power with power-added efficiency of 38% and large-signal gain of 18 d B. This bination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. QPA1010D can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both CW and pulse operations. The QPA1010D is matched to 50Ω with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance and operational flexibility allow it support satellite munication and data links, as well as, military and mercial radar systems. The QPA1010D is 100% DC and RF tested on-wafer to ensure pliance to electrical specifications. Lead-free and Ro HS pliant. Product Features - Frequency Range: 7.9 -  11 GHz - POUT: 42 d Bm at PIN = 24 d Bm - PAE: 38 % at PIN = 24 d Bm - Large Signal Gain: 18 d B at PIN = 24 d Bm - Small Signal Gain: 25 d B - Integrated Power Detector - Bias: VD = 24 V, IDQ = 600 m A, VG = - 1.9 V Typical - Pulsed VD: PW =100 µS, DC = 10% - Chip Dimensions: 2.75 x 1.65 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications - Satellite munications - Data Links - Military and mercial Radar Ordering Information Part No. Description - 11 GHz 15 W Ga N Power Amplifier QPA1010DPCB4B01 Evaluation...