Datasheet Details
| Part number | QPA1019 |
|---|---|
| Manufacturer | Qorvo |
| File Size | 815.46 KB |
| Description | Power Amplifier |
| Datasheet | QPA1019-Qorvo.pdf |
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Overview: QPA1019 ® 4.5 – 7.0 GHz 10 W GaN Power Amplifier Product Overview Qorvo’s QPA1019 is a packaged high-power, C-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 4.5 – 7.0 GHz, the QPA1019 provides greater than 10 W of saturated output power and 19 dB of large-signal gain while achieving greater than 39% power-added efficiency. The QPA1019 is packaged in a plastic overmold QFN with a Cu paddle offering easy handling with good thermal properties. As a result, the QPA1019 has bias flexibility allowing the user to vary the voltage to achieve optimum system performance while maintaining high reliability. The QPA1019 is matched to 50 ohms with integrated DC blocking caps on both I/O ports. With the high performance, good thermal characteristics and ease of handling and system integration, the QPA1019 is ideal for radar and satellite munication systems. Lead-free and RoHS pliant.
| Part number | QPA1019 |
|---|---|
| Manufacturer | Qorvo |
| File Size | 815.46 KB |
| Description | Power Amplifier |
| Datasheet | QPA1019-Qorvo.pdf |
|
|
|
4.5 – 7.0GHz 10W GaN Power Amplifier VDET QPA1019S2 Samples (2 pcs.
pack) QPA1019TR7 250 pieces on a 7” reel (standard) QPA1019EVB Evaluation Board for QPA1019 1 of 21 .qorvo.
® Absolute Maximum Ratings Parameter Value / Range Drain Voltage (VD) Gate Voltage Range (VG) 29.5 −6 to 0 V Drain Current (ID1, ID2) 0.52, 2.0 A Gate Current (IG) See chart Power Dissipation (PDISS), CW, 85°C Input Power (PIN), CW, 50 Ω, VD=22 V, IDQ=290 mA, 85 °C Input Power (PIN), CW, 4:1 V
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