QPA1017D
QPA1017D is 50 Watt GaN Power Amplifier manufactured by Qorvo.
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5.7 - 7 GHz 50 Watt Ga N Power Amplifier
Product Overview
Qorvo's QPA1017D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um Ga N on Si C process (QGa N15). The QPA1017D operates from 5.7 - 7.0 GHz, provides 50 W of saturated output power with 21 d B of large signal gain and greater than 40% power- added efficiency. For satellite munications applications, QPA1017D provides 25 W linear power with 25 d Bc third order intermodulation distortion products.
To simplify system integration, QPA1017D is fully matched to 50 ohms. Input port is DC grounded for improved ESD performance, output port is AC coupled with integrated DC blocking capacitor.
Lead-free and Ro HS pliant
Key Features
- Frequency Range: 5.7 - 7 GHz
- PSAT (PIN = 26 d Bm): > 47 d Bm
- PAE (PIN = 26 d Bm): > 40 %
- Power Gain (PIN = 26 d Bm): > 21 d B
- IM3 (POUT/Tone = 41 d Bm): -25 d Bc
- Small Signal Gain: > 28 d B
- Bias: VD = +24 V, IDQ = 1.5 A, VG = -2.5 V typ.
- Die Dimensions: 4.79 x 6.45 x 0.10 mm
Functional Block Diagram
Performance is typical across frequency. Please reference electrical specification table and data plots for more details.
Applications
- C-Band Radar
- Satellite munications
Data Sheet Rev. B, May 2021 | Subject to change without notice
Ordering Information
Part No. QPA1017D QPA1017DEVB
Description
5.7 - 7 GHz 50 Watt Ga N Amplifier (10 pcs.)
Evaluation Board for QPA1017D
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