Datasheet Details
| Part number | QPA1017D |
|---|---|
| Manufacturer | Qorvo |
| File Size | 1.01 MB |
| Description | 50 Watt GaN Power Amplifier |
| Datasheet | QPA1017D-Qorvo.pdf |
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Overview: QPA1017D ® 5.7 – 7 GHz 50 Watt GaN Power Amplifier Product Overview Qorvo's QPA1017D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). The QPA1017D operates from 5.7 – 7.0 GHz, provides 50 W of saturated output power with 21 dB of large signal gain and greater than 40% power–added efficiency. For satellite munications applications, QPA1017D provides 25 W linear power with 25 dBc third order intermodulation distortion products. To simplify system integration, QPA1017D is fully matched to 50 ohms. Input port is DC grounded for improved ESD performance, output port is AC coupled with integrated DC blocking capacitor.
| Part number | QPA1017D |
|---|---|
| Manufacturer | Qorvo |
| File Size | 1.01 MB |
| Description | 50 Watt GaN Power Amplifier |
| Datasheet | QPA1017D-Qorvo.pdf |
|
|
|
5.7 – 7 GHz 50 Watt GaN Amplifier (10 pcs.) Evaluation Board for QPA1017D 1 of 29 .qorvo.
® Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PDISS), 85 °C Value / Range 29.5 V -6 V to 0 V 10 A See plot page 20 Pulsed, 180 W CW, 100 W Input Power (PIN), Pulsed and CW, 50 Ω, VD = 24 V, IDQ = 1.5 A, TBASE = 85 °C, 32 dBm* Input Power (PIN), Pulsed and CW, 3:1 VSWR, VD = 24 V, IDQ = 1.5 A , TBASE = 85 °C 32 dBm* Mounting Temperature (30 seconds) 320 ºC Storage Temperature -55 to +150 ºC Operation of this device outside the parameter ranges given ab
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