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QPA1017D - 50 Watt GaN Power Amplifier

General Description

5.7   7 GHz 50 Watt GaN Amplifier (10 pcs.) Evaluation Board for QPA1017D 1 of 29 www.qorvo.com ® Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PDISS), 85 °C Value / Range 29.5 V -6 V to 0 V 10 A Se

Key Features

  • Frequency Range: 5.7  .
  • 7 GHz.
  • PSAT (PIN = 26 dBm): > 47 dBm.
  • PAE (PIN = 26 dBm): > 40 %.
  • Power Gain (PIN = 26 dBm): > 21 dB.
  • IM3 (POUT/Tone = 41 dBm): -25 dBc.
  • Small Signal Gain: > 28 dB.
  • Bias: VD = +24 V, IDQ = 1.5 A, VG = -2.5 V typ.
  • Die Dimensions: 4.79 x 6.45 x 0.10 mm Functional Block Diagram Performance is typical across frequency. Please reference electrical specification table and data plots for more details.

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Datasheet Details

Part number QPA1017D
Manufacturer Qorvo
File Size 1.01 MB
Description 50 Watt GaN Power Amplifier
Datasheet download datasheet QPA1017D Datasheet

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QPA1017D ® 5.7 – 7 GHz 50 Watt GaN Power Amplifier Product Overview Qorvo's QPA1017D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). The QPA1017D operates from 5.7 –  7.0 GHz, provides 50 W of saturated output power with 21 dB of large signal gain and greater than 40% power–added efficiency. For satellite communications applications, QPA1017D provides 25 W linear power with 25 dBc third order intermodulation distortion products. To simplify system integration, QPA1017D is fully matched to 50 ohms. Input port is DC grounded for improved ESD performance, output port is AC coupled with integrated DC blocking capacitor. Lead-free and RoHS compliant Key Features  Frequency Range: 5.