QPA1017D Overview
Key Specifications
Description
5.7 – 7 GHz 50 Watt GaN Amplifier (10 pcs.) Evaluation Board for QPA1017D 1 of 29 ® Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PDISS), 85 °C Value / Range 29.5 V -6 V to 0 V 10 A See plot page 20 Pulsed, 180 W CW, 100 W Input Power (PIN), Pulsed and CW, 50 Ω, VD = 24 V, IDQ = 1.5 A, TBASE = 85 °C, 32 dBm* Input Power (PIN), Pulsed and CW, 3:1 VSWR, VD = 24 V, IDQ = 1.5 A , TBASE = 85 °C 32 dBm* Mounting Temperature (30 seconds) 320 ºC Storage Temperature -55 to +150 ºC Operat.
Key Features
- Frequency Range: 5.7 – 7 GHz
- PSAT (PIN = 26 dBm): > 47 dBm
- PAE (PIN = 26 dBm): > 40 %
- Power Gain (PIN = 26 dBm): > 21 dB
- IM3 (POUT/Tone = 41 dBm): -25 dBc
