Datasheet Details
| Part number | QPA1011D |
|---|---|
| Manufacturer | Qorvo |
| File Size | 0.95 MB |
| Description | 25W GaN Power Amplifier |
| Datasheet |
 QPA1011D Datasheet
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General Description
Qorvo’s QPA1011D is a X-band high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15).
11 GHz and typically provides 25 W saturated output power with power-added efficiency of 37% and large-signal gain of 20 dB.
Key Features
- Frequency Range: 7.9 .
- 11 GHz.
- POUT: 45 dBm at PIN = 25 dBm.
- PAE: 37 % at PIN = 25 dBm.
- Large Signal Gain: 20 dB at PIN = 25 dBm.
- Small Signal Gain: 26 dB.
- Integrated Power Detector.
- Bias: VD = 24 V, IDQ = 1200 mA, VG =.
- 2.0 V Typical.
- Pulsed VD: PW =100 µS, DC = 10%.
- Chip Dimensions: 2.75 x 3.12 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Applica.