QPA1011D Datasheet | Qorvo

-  11.0 GHz 25 W Ga N Power Amplifier Product Description Qorvo’s QPA1011D is a X-band high power MMIC amplifier fabricated on Qorvo’s production 0.15um Ga N on Si C process (QGa N15). The QPA1011D operates from 7.9 - 11 GHz and typically provides 25 W saturated output power with power-added efficiency of 37% and large-signal gain of 20 d B. This bination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. QPA1011D can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both CW and pulse operations. The QPA1011D is matched to 50Ω with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance and operational flexibility allows it support satellite munication and data links, as well as, military and mercial radar systems. The QPA1011D is 100% DC and RF tested on-wafer to ensure pliance to electrical specifications. Lead-free and Ro HS pliant. Functional Block Diagram Product Features - Frequency Range: 7.9 -  11 GHz - POUT: 45 d Bm at PIN = 25 d Bm - PAE: 37 % at PIN = 25 d Bm - Large Signal Gain: 20 d B at PIN = 25 d Bm - Small Signal Gain: 26 d B - Integrated Power Detector - Bias: VD = 24 V, IDQ = 1200 m A, VG = - 2.0 V Typical - Pulsed VD: PW =100 µS, DC = 10% - Chip Dimensions: 2.75 x 3.12 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Applications - Satellite munications - Data Links - Military and mercial Radar Ordering Information Part No. Description 7.9 -  11 GHz 25 W Ga N Power Amplifier QPA1011DPCB4B01 Evaluation...