RF5122
RF5122 is LINEAR POWER AMPLIFIER manufactured by RF Micro Devices.
Features
- 8
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- Applications
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- IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications mercial and Consumer Systems Portable Battery-Powered Equipment Spread-Spectrum and MMDS Systems
Functional Block Diagram
Product Description
The RF5122 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and pact flash applications. The device is manufactured on an advanced In Ga P Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spreadspectrum transmitters. The device is provided in a 2.2mmx2.2mm, 8-pin, QFN with a backside ground. The RF5122 is designed to maintain linearity over a wide range of supply voltages and power outputs. The RF5122 also has built-in power detector and incorporates the input, interstage, and output matching ponents internally which reduces the ponent count used externally and makes it easier to incorporate on any design.
Ordering Information
RF5122 RF5122PCBA-41X 3V to 4.5V, 2.4GHz to 2.5GHz Linear Power Amplifier Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
Rev A5 DS070517
Ga As HBT Ga As MESFET In Ga P HBT
Si Ge Bi CMOS Si Bi CMOS Si Ge HBT
PDETECT
Ga As p HEMT Si CMOS Si BJT
N/C
- Single Power Supply 3.0V to 3.6V 24d B Minimum Gain Input and Output Matched to 50 Ω 2400MHz to 2500MHz Frequency Range +18d Bm @ <2.5% typ EVM, 120m A @ 3.3VCC
RF IN 1
Input Match Interstage Match Output Match
VC1 7
6 VC2
VREG 2
Bias Circuit
Power Detector
5 RF OUT
Ga N HEMT
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