RF5125 Datasheet | RF Micro Devices

Features - Single Power Supply 3.0V to 5.0V +21d Bm, <4.0%EVM, 185m A@VCC =3.3V 28d B Typical Small Signal Gain 50 Ω Input and Interstage Matching 2400MHz to 2500MHz Frequency Range +23d Bm, <4%EVM, 250m A@VCC =5.0V RF IN 2 11 RF OUT - Input Match Interstage Match - - RF IN 3 10 RF OUT Bias Circuit NC 4 5 NC 6 VREG1 7 VREG2 Power Detector 9 NC 8 PDTECT - - Applications - Functional Block Diagram IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications mercial and Consumer Systems Portable Battery-Powered Equipment Spread-Spectrum and MMDS Systems Product Description The RF5125 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and pact flash applications. The device is manufactured on an advanced In Ga P Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spreadspectrum transmitters. The device is provided in a 3mmx3mm, 16-pin, QFN with a backside ground. The RF5125 is designed to maintain linearity over a wide range of supply voltage and power output. - - - - Ordering Information RF5125 RF5125PCBA-41X 3V to 5V, 2.4GHz to 2.5GHz Linear Power Amplifier Fully Assembled Evaluation Board Optimum Technology Matching® Applied Rev A23 DS070515 Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, Power Star®, POLARIS™ TOTAL RADIO™ and Ultimate Blue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 - For sales or technical support, contact RFMD at (+1) 336-678-5570 or...