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RF5110G Datasheet 3v Gsm Power Amplifier

Manufacturer: RF Micro Devices (now Qorvo)

Overview: RF5110G 3V GSM POWER AMPLIFIER RoHS & Pb-Free Product Package Style: QFN, 16-Pin, 3 x 3 APC1 APC2 VCC.

General Description

The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications.

The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band.

On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation.

Key Features

  • Single 2.7V to 4.8V Supply Voltage.
  • +36dBm Output Power at 3.5V.
  • 32dB Gain with Analog Gain Control.
  • 57% Efficiency.
  • 800MHz to 950MHz Operation.
  • Supports GSM and E-GSM 16 15 14 13 VCC1 1 12 RF OUT GND1 2 11 RF OUT RF IN 3 10 RF OUT GND2 4 9 RF OUT 5678 VCC2 VCC2 NC 2f0.

RF5110G Distributor