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RF5110G Datasheet PDF

RF Micro Devices RF5110G

The RF5110G is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics.
Part No. RF5110G
Datasheet RF5110G Download
Manufacturer
RF Micro Devices
Description 3V GSM POWER AMPLIFIER
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RF5110G datasheet page 1 preview

FEATURES

„ Single 2.7V to 4.8V Supply Voltage „ +36dBm Output Power at 3.5V „ 32dB Gain with Analog Gain Control „ 57% Efficiency „ 800MHz to 950MHz Operation „ Supports GSM and E-GSM 16 15 14 13 VCC1 1 12 RF OUT GND1 2 11 RF OUT RF IN 3 10 RF OUT GND2 4 9 RF OUT 5678 VCC2 VCC2 NC 2f0

APPLICATIONS

„ 3V GSM Cellular Handsets „ 3V Dual-Band/Triple-Band Handsets „ GPRS Compatible „ Commercial and Consumer Systems „ Portable Battery-Powered Equipment „ FM Radio

APPLICATIONS

: 150 MHz/220 MHz/ 450 MHz/865 MHz/915 MHz Functional Block Diagram Product

DESCRIPTION

On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The RF5110G can be used together with the RF5111 for dual-band operation. The device is packaged in an ultra-small 3mmx3mmx1mm plastic package, minimizing the required board space. Ordering Information RF5110G 3V GSM Power Amplifier RF5110GPCBA-410 Fully Assembled Evaluation Board O...
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