Datasheet Details
| Part number | RF5110G |
|---|---|
| Manufacturer | Qorvo |
| File Size | 2.23 MB |
| Description | 3V General Purpose/GSM Power Amplifier |
| Datasheet | RF5110G-Qorvo.pdf |
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Overview: RF5110G ® 3V General Purpose/GSM Power Amplifier Product Overview The RF5110G is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured with an advanced GaAs HBT process. It is designed for use as the final RF amplifier in GSM hand-held equipment in 900 MHz band, and General-Purpose radio application in standard sub-bands from 150 MHz to 960 MHz. An analog on-board power controller provides over 70 dB range of adjustment. Which allows for power down with a voltage equals to the logic “Low” to set the device in standby mode. The RF5110G RF Input is internally matched to 50 Ω. On its RF Output, it can be easily matched externally to obtain optimum power and efficiency for certain applications.
| Part number | RF5110G |
|---|---|
| Manufacturer | Qorvo |
| File Size | 2.23 MB |
| Description | 3V General Purpose/GSM Power Amplifier |
| Datasheet | RF5110G-Qorvo.pdf |
|
|
|
2,500 pieces on a 7” reel (standard) GSM900 Fully Tested Evaluation Board Datasheet, Rev.
F, December 22, 2020 | Subject to change without notice 1 of 16 .qorvo.
® Absolute Maximum Ratings Parameter Rating Storage Temperature −55 °C to +150 °C Device Voltage (VCC, VCC1, VCC2) -0.5 V to +6.0 V Control Voltage (VAPC1, VAPC2) -0.5 V to +3.0 V Device Current (ICC, ICC1, ICC2) 2400 mA RF Input Power +13 dBm Duty Cycle at Max Power 50% Exceeding any one or a bination of the Absolute Maximum Rating conditions may cause permanent damage to the device.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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RF5110G | 3V GSM POWER AMPLIFIER | RF Micro Devices |
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RF5110 | 3V GSM POWER AMPLIFIER | RF Micro Devices |
| Part Number | Description |
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