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RF5110G - 3V General Purpose/GSM Power Amplifier

General Description

Datasheet, Rev.

55 °C to +150 °C Device Voltage (VCC, VCC1, VCC2)

Key Features

  • General Purpose:.
  • Single 2.8 V to 3.6 V Supply.
  • +32 dBm Output Power.
  • 53% Efficiency.
  • 150 MHz to 960 MHz Operation GSM:.
  • Single 2.7 V to 4.8 V Supply.
  • +36 dBm Output Power at 3.6 V.
  • 32 dB Gain with Analog Gain Control.
  • 57% Efficiency.
  • 800 MHz to 950 MHz Operation.
  • Supports GSM and E-GSM.

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Datasheet Details

Part number RF5110G
Manufacturer Qorvo
File Size 2.23 MB
Description 3V General Purpose/GSM Power Amplifier
Datasheet download datasheet RF5110G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF5110G ® 3V General Purpose/GSM Power Amplifier Product Overview The RF5110G is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured with an advanced GaAs HBT process. It is designed for use as the final RF amplifier in GSM hand-held equipment in 900 MHz band, and General-Purpose radio application in standard sub-bands from 150 MHz to 960 MHz. An analog on-board power controller provides over 70 dB range of adjustment. Which allows for power down with a voltage equals to the logic “Low” to set the device in standby mode. The RF5110G RF Input is internally matched to 50 Ω. On its RF Output, it can be easily matched externally to obtain optimum power and efficiency for certain applications.