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RF5110G - 3V General Purpose/GSM Power Amplifier

Datasheet Summary

Description

Datasheet, Rev.

55 °C to +150 °C Device Voltage (VCC, VCC1, VCC2)

Features

  • General Purpose:.
  • Single 2.8 V to 3.6 V Supply.
  • +32 dBm Output Power.
  • 53% Efficiency.
  • 150 MHz to 960 MHz Operation GSM:.
  • Single 2.7 V to 4.8 V Supply.
  • +36 dBm Output Power at 3.6 V.
  • 32 dB Gain with Analog Gain Control.
  • 57% Efficiency.
  • 800 MHz to 950 MHz Operation.
  • Supports GSM and E-GSM.

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Datasheet preview – RF5110G

Datasheet Details

Part number RF5110G
Manufacturer Qorvo
File Size 2.23 MB
Description 3V General Purpose/GSM Power Amplifier
Datasheet download datasheet RF5110G Datasheet
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Full PDF Text Transcription

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RF5110G ® 3V General Purpose/GSM Power Amplifier Product Overview The RF5110G is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured with an advanced GaAs HBT process. It is designed for use as the final RF amplifier in GSM hand-held equipment in 900 MHz band, and General-Purpose radio application in standard sub-bands from 150 MHz to 960 MHz. An analog on-board power controller provides over 70 dB range of adjustment. Which allows for power down with a voltage equals to the logic “Low” to set the device in standby mode. The RF5110G RF Input is internally matched to 50 Ω. On its RF Output, it can be easily matched externally to obtain optimum power and efficiency for certain applications.
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