Datasheet4U Logo Datasheet4U.com

RF5117C - LINEAR POWER AMPLIFIER

Datasheet Summary

Description

The RF5117C is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications.

Features

  • Single 3.3V Power Supply.
  • +30dBm Saturated Output Power VCC VCC NC NC.
  • 26dB Small Signal Gain.
  • High Linearity 12 RF OUT 11 RF OUT 10 RF OUT 16 RF IN 1 BIAS GND1 2 PWR SEN 3 PWR REF 4 5 VREG1 15 14 13.
  • 1800MHz to 2800MHz Frequency Range.
  • +17dBm PO, 11G,.

📥 Download Datasheet

Datasheet preview – RF5117C

Datasheet Details

Part number RF5117C
Manufacturer RF Micro Devices
File Size 300.99 KB
Description LINEAR POWER AMPLIFIER
Datasheet download datasheet RF5117C Datasheet
Additional preview pages of the RF5117C datasheet.

📁 Similar Datasheet

  • RF5110G - 3V General Purpose/GSM Power Amplifier (Qorvo)
  • RF51-26S - SPST Vacuum Relays (JENNINGS)
  • RF50-26S - SPST Vacuum Relays (JENNINGS)
  • RF500M - Radio Modem (Campbell Scientific)
  • RF501 - Fast recovery Diodes (Rohm)
  • RF501B2S - Fast Recovery Diode (Rohm)
  • RF501BGE2S - Super Fast Recovery Diode (ROHM)
  • RF501BM2S - Super Fast Recovery Diode (Rohm)
  • RF501BM2SFH - Super Fast Recovery Diode (Rohm)
  • RF505B6S - Super Fast Recovery Diode (Rohm)
Other Datasheets by RF Micro Devices
  • RF5117 - 3V/ 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
  • RF5117PCBA - 3V/ 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
  • RF5110 - 3V GSM POWER AMPLIFIER
  • RF5110G - 3V GSM POWER AMPLIFIER
  • RF5111 - 3V DCS POWER AMPLIFIER
  • RF5112 - 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER
  • RF5102 - 3V TO 5V LINEAR POWER AMPLIFIER
  • RF5122 - LINEAR POWER AMPLIFIER

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com RF5117C 0 Typical Applications • IEEE802.11B WLAN Applications • IEEE802.11G WLAN Applications • 2.5GHz ISM Band Applications Product Description The RF5117C is a linear, medium-power, high-efficiency amplifier IC designed specifically for battery-powered WLAN applications such as PC cards, mini PCI, and compact flash applications. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz WLAN and other spread-spectrum transmitters. The device is provided in a 3mmx3mm, 16-pin, leadless chip carrier with a backside ground. The RF5117C is designed to maintain linearity over a wide range of supply voltage and power output. 3V, 1.8GHz TO 2.
Published: |