RF5112 Overview
The RF5112 is a linear, medium-power, high-efficiency, two-stage amplifier IC designed specifically for battery-powered WiFi applications such as PC cards, mini PCI, and pact flash applications. The device is manufactured on an advanced InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz OFDM and other spreadspectrum transmitters....
RF5112 Key Features
- Single Power Supply 3.0V to 5.0 V
- +23dBm, <4%EVM, 250mA at VCC = 5.0 V
- +21dBm, <4.0%EVM, 185mA atVCC = 3.3 V
- 28dB Typical Small Signal Gain
- 50 Input and Interstage Match
- 2400MHz to 2500MHz Fre