RF Micro Devices RF5163
The RF5163 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 802.11b/g/n access point transmitters. The device is provided in a 4mmx4mm, 16-pin, leadless chip carrier with a backside ground.| Part No. | RF5163 |
|---|---|
| Datasheet | RF5163 Download |
| Manufacturer |  RF Micro Devices |
| Description | LINEAR POWER AMPLIFIER |
| Buy | Stock & Price |
APPLICATIONS
● 802.11b/g/n Access Points● PCS Communication Systems
● 2.4GHz ISM Band
APPLICATIONS
ProductDESCRIPTION
The RF5163 is designed to maintain linearity over a wide range of supply voltage and power output. -A2 PLCS 0.10 C A 0.05 C 3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER RoHS Compliant & Pb-Free Product● Commercial and Consumer Systems
● Portable Battery-Powered Equipment
● Broadband Spread-Spectrum Systems 4.00 SQ. 2.00 TYP 0.10 C B 2 PLCS 0.70 0.65 0.90 0.85 0.05 0.00 12° MAX 0.10 C B 2 PLCS -B-C- 1.87 TYP 3.75 SQ 0.10 C A 2 PLCS SEATING PLANE Shaded lead is pin 1. Dimensions in mm. 0.10 M C A B 0.60 0.24 TYP 0.35 0.23 Pin 1 ID 0.20 R 2.25 SQ. 1.95 0.75 TYP 0.50 0.65 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: QFN, 16-Pin, 4x4 GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS
FEATURES
● Single 3.3V or 5V Power Supply● +33dBm Saturated Output Power (typ.)
● 20dB Large Signal Gain (typ.)
● 2.0% EVM @ +26dBm, 54Mbps (typ.) VCC1...
