RF5163 Datasheet | RF Micro Devices

Description The RF5163 is a linear, medium-power, high-efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 802.11b/g/n access point transmitters. The device is provided in a 4mmx4mm, 16-pin, leadless chip carrier with a backside ground. The RF5163 is designed to maintain linearity over a wide range of supply voltage and power output. -A2 PLCS 0.10 C A 0.05 C 3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER Ro HS pliant & Pb-Free Product - mercial and Consumer Systems - Portable Battery-Powered Equipment - Broadband Spread-Spectrum Systems 4.00 SQ. 2.00 TYP 0.10 C B 2 PLCS 0.70 0.65 0.90 0.85 0.05 0.00 12° MAX 0.10 C B 2 PLCS -B-C- 1.87 TYP 3.75 SQ 0.10 C A 2 PLCS SEATING PLANE Shaded lead is pin 1. Dimensions in mm. 0.10 M C A B 0.60 0.24 0.35 0.23 Pin 1 ID 0.20 R 2.25 SQ. 1.95 0.75 TYP 0.50 0.65 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS In Ga P/HBT Package Style: QFN, 16-Pin, 4x4 Ga As HBT Si Ge HBT Ga N HEMT Ga As MESFET Si CMOS Si Ge Bi-CMOS Features - Single 3.3V or 5V Power Supply - +33d Bm Saturated Output Power (typ.) - 20d B Large Signal Gain (typ.) - 2.0% EVM @ +26d Bm, 54Mbps (typ.) VCC1 VCC1 14 16 RF IN 1 VREG1GND 2 P DOWN 3 P DETECT 4 5...