SUF-1033 Datasheet | RF Micro Devices

SUF-1033DC to 20 GHz, Cascadable p HEMT MMIC Amplifier DC to 20 GHz, CASCADABLE p HEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm .. Product Description The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20 GHz. This p HEMT based amplifier uses a patented selfbias network that operates from a single 5 V supply. It offers efficient cascadable performance in a pact 3 mm x 3 mm Ceramic QFN package. It is well suited for RF LO and IF driver applications. Features - - - - Broadband Flat Gain = 10 d B P1d B = 14 d Bm at 2 GHz 5 V Single Supply Operation Low Gain Variation vs. Temperature 50 Ω I/O Low-Noise, Efficient Gain Block Broadband munications Test Instrumentation Military and Space LO and IF Mixer Applications High IP3 RF Driver Applications - Optimum Technology Matching® Applied Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT In P HBT RF MEMS LDMOS Applications - - - - - 9 Parameter Frequency of Operation Small Signal Power Gain Min. Specification Typ. Max. Unit Condition GHz 10.2 d B Freq = 3 GHz 9.5 d B Freq = 9 GHz 7.4 d B Freq = 18 GHz Output Power at 1 d B pression 13.8 d Bm Freq = 3 GHz 13.7 d Bm Freq = 9 GHz 13.2 d Bm Freq = 18 GHz Output Third Order Intercept Point 26.1 d Bm Freq = 3 GHz 24.3 d Bm Freq = 9 GHz 22.9 d Bm Freq = 18 GHz Input Return Loss 15.8 d B Freq = 3 GHz 13.8 d B Freq = 9 GHz 7.6 d B Freq = 18 GHz Output Return Loss 13.6 d B Freq = 3 GHz 13.7 d B Freq = 9 GHz 27.1 d B Freq = 18 GHz Isolation 18.0 d B Freq = 3 GHz 19.2 d B Freq = 9 GHz 20.0 d B Freq = 18 GHz Device Operating Voltage 3.4 V With 33 Ω resistor between VD and VDD Test Conditions: Z0 = 50 Ω, VS = 5 V, ID = 46 m A, RBIAS = 33 Ω, T = 25°C, OIP3 Tone Spacing = 1 MHz with POUT per tone = 0 d Bm. Circuit Board Data with Bias Tees. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, Power Star®, POLARIS™ TOTAL RADIO™ and...