SUF-5033 Datasheet | RF Micro Devices

SUF-5033Low Noise, High Gain Si Ge HBT 0.1 GHZ TO 4.0 GHZ, CASCADABLE PHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm .. Product Description The SUF-5033 is a monolithically matched broadband high IP3 gain block covering 0.1 GHz to 4.0 GHz. This p HEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature pensating active bias network that operates from a single 5 V supply. It offers efficient, cascadable performance in a pact 3 mm x 3 mm Ceramic QFN package. It is well-suited for RF, LO, and IF driver applications. Optimum Technology Matching® Applied Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT In P HBT RF MEMS LDMOS Features - - - - - - - Broadband Performance High Gain = 18.5 d B at 2 GHz P1d B = 20.5 d Bm at 2 GHz 50 Ω I/O Low-Noise, Efficient Gain Block 5 V Operation, No Dropping Resistor Low Gain Variation versus Temperature Patented Self-Bias Darlington Circuit Broadband munications Test Instrumentation Military and Space LO and IF Mixer Applications High IP3 RF Driver Applications Condition Applications - - - - - 9 Parameter Frequency of Operation Small Signal Power Gain Min. 0.1 16.0 Specification Typ. Max. Unit GHz 18.5 d B 2 GHz 16.0 d B 4 GHz Output Power at 1 d B pression 21.0 d Bm 2 GHz 21.5 d Bm 4 GHz Output Third Order Intercept Point 27.6 d Bm 2 GHz 27.9 d Bm 4 GHz Noise Figure 3.6 d B 2 GHz 4.0 d B 4 GHz Input Return Loss -10.3 d B 2 GHz -11.1 d B 4 GHz Output Return Loss -19.0 d B 2 GHz -23.8 d B 4 GHz Reverse Isolation -24.0 d B 2 GHz -23.0 d B 4 GHz Device Operating Voltage 5.0 V Device Operating Current 90 m A Gain Variation vs. Temperature -0.01 d B/°C Thermal Resistance 100 °C/W junction to backside Test Conditions: V = 5 V, ID = 90 m A OIP3 Tone Spacing = 1 MHz, POUT per tone = 0 d Bm, ZS = ZL = 50 Ω, 25°C, With Bias Tees RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless...