SUF-8533 Datasheet | RF Micro Devices

SUF-8533DC to 12 GHz, Cascadable p HEMT MMIC Amplifier Preliminary DC to 12 GHz, CASCADABLE p HEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm .. Product Description RFMD’s SUF-8533 is a monolithically matched high IP3 broadband p HEMT MMIC amplifier covering DC to 12 GHz. This p HEMT FET based amplifier uses a self-bias Darlington topology featuring a gain and temperature pensating active bias network that operates from a single 5 V supply. It offers efficiency, cascadable performance in a pact 3 mm x 3 mm Ceramic QFN package. It is well suited for RF, LO, and IF driver applications. Optimum Technology Matching® Applied Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT In P HBT RF MEMS LDMOS Features - - - - - - Broadband Performance Gain = 15.4 d B at 3 GHz P1d B = 16.7 d Bm at 3 GHz Low-Noise, Efficient Gain Block 5 V Single Supply Operation Low Gain Variation versus Temperature Applications - - - - - Broadband munications Test Instrumentation Military and Space LO and IF Mixer Applications High IP3 RF Driver Applications Parameter Frequency of Operation Small Signal Power Gain, GP Min. Specification Typ. Max. Unit Condition GHz 15.4 d B Freq = 3 GHz 14.6 d B Freq = 6 GHz 11.7 d B Freq = 10 GHz Output Power at 1 d B pression 16.7 d Bm Freq = 3 GHz 16.8 d Bm Freq = 6 GHz 14.6 d Bm Freq = 10 GHz Output Third Order Intercept Point 27.1 d Bm Freq = 3 GHz 25.7 d Bm Freq = 6 GHz 23.5 d Bm Freq = 10 GHz Input Return Loss 10.7 d B Freq = 3 GHz Output Return Loss 22.3 d B 18 W resistor between VD and VDD, Freq = 3 GHz Device Operating Voltage 4.0 V Current 58 m A Noise Figure, NF 4.0 d B Freq = 3 GHz Thermal Resistance 159 °C/W Junction to backside Test Conditions: ZO = 50 Ω, VS = 5 V, ID = 58 m A, RBIAS = 18.0 Ω, T = 25°C, OIP3 Tone Spacing =1 MHz with POUT/TONE = 0 d Bm. Circuit board data with bias tees. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling...