SBB3089Z Datasheet | RF Micro Devices

50MHz to 6000MHz In Ga P HBT ACTIVE BIAS GAIN BLOCK Package: SOT-89 Product Description RFMD’s SBB3089Z is a high performance In Ga P HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. The SBB3089Z product is designed for high linearity 5V gain block applications that require excellent gain flatness, small size, and minimal external ponents. It is internally matched to 50. Optimum Technology Matching® Applied Ga As HBT Ga As MESFET - In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT In P HBT RF MEMS LDMOS d B Gain and Return Loss VS = 5V, IS = 42m A S21 20 10 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C -10 -20 -30 0 S11 S22 1 234 Frequency (GHz) Features - Single Fixed 5V Supply - PThaetermntaeld DSeeslfig Bnias Circuit and - Gain=16.4d Bm at 1950MHz - P1d B=15.2d Bm at 1950MHz - OIP3=29.5d Bm at 1950MHz - RHo Bb Must 1000V ESD, Class 1C Applications - PA Driver Amplifier - Cellular, PCS, GSM, UMTS - IF...