1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant
lOutline
TO-220FM
lInner circuit
l.
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R6018JNX Nch 600V 18A Power MOSFET Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.286Ω ±18A 72W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast swit...
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1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-220FM lInner circuit lApplication Switching lPackaging specifications Packing Tube Packing code C7 G Marking R6018JNX Basic ordering unit (pcs) 2000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±18 A Pulsed drain current IDP*2 ±54 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 4.
R6018JNX Datasheet
