• Part: R6018ANJ
  • Description: Drive Nch MOSFET
  • Category: MOSFET
  • Manufacturer: ROHM
  • Size: 1.26 MB
Download R6018ANJ Datasheet PDF
ROHM
R6018ANJ
Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 13.1 9.0 (3) (1) Gate (2) Drain (3) Source (1) (2) - Application Switching - Packaging specifications Type R6018ANJ Package Code Basic ordering unit (pieces) Taping TL 1000  .Data Sheet.co.kr - Inner circuit ∗1 - Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature - 1 Pw10s, Duty cycle1% - 2 L 500H, VDD=50V, RG=25 , T ch=25C (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE Limits 600 30 18 72 18 72 9 21.6 100 150 - 55 to 150 Unit V V A A A A A m J W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID - 3 IDP - 1 IS - 3 ISP IAS PD Tch Tstg - 1 - 2 - 2 -...