• Part: R6018ANX
  • Description: Drive Nch MOSFET
  • Category: MOSFET
  • Manufacturer: ROHM
  • Size: 1.01 MB
Download R6018ANX Datasheet PDF
ROHM
R6018ANX
Features 1) Low on-resistance. - Inner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple. - 1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ; Ro HS pliant - Packaging specifications Packing Bulk Reel size (mm) - - Application Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) Taping code - Marking - Absolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt Tc = 25°C Tc = 100°C VDSS ID - 1 ID - 1 ID,pulse - 2 VGSS EAS - 3 EAR - 4 IAR - 3 PD Tj Tstg dv/dt - 5 600 ±18 ±8.6 ±72 ±30 21.6 3.5 9 50 150 - 55 to +150 15 V A A A V m J m J A W °C °C...