Inner circuit
2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. (1) Gate (2) Drain (3) Source
4) Drive circuits can be simple.
1 Body Diode
5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant.
Full PDF Text Transcription for R6018ANX (Reference)
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R6018ANX. For precise diagrams, and layout, please refer to the original PDF.
NotNeRewcDoemsimgennsded for R6018ANX Nch 600V 18A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 600V 0.27Ω 18A 50W Outline TO-220FM (1)(2)(3) Features 1) Low on-res...
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600V 0.27Ω 18A 50W Outline TO-220FM (1)(2)(3) Features 1) Low on-resistance. Inner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy.
R6018ANX Datasheet
