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RB228T-30NZ - Schottky Barrier Diode

Features

  • 1) Cathode common dual type 2) High reliability 3) Super low IR Datasheet.
  • Structure (1) (2) (3) Anode Cathode Anode.
  • Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date.
  • Package Dimensions (Unit : mm) 7 540 34.5.
  • Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward current surge peak IFSM Ope.

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Datasheet Details

Part number RB228T-30NZ
Manufacturer ROHM
File Size 1.14 MB
Description Schottky Barrier Diode
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Full PDF Text Transcription

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Schottky Barrier Diode RB228T-30NZ Application Switching power supply Dimensions (Unit : mm) Features 1) Cathode common dual type 2) High reliability 3) Super low IR Datasheet Structure (1) (2) (3) Anode Cathode Anode Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture date Package Dimensions (Unit : mm) 7 540 34.5 Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward current surge peak IFSM Operating junction temperature Tj Storage temperature Tstg Duty≦0.5 Direct reverse voltage 60Hz half sin wave, resistive load, IO/2 per diode, Tc=100ºC Max.
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