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RB400VA-50 - Schottky Barrier Diode

Key Features

  • all mold type. (TUMD2) 2) Low VF, Low IR. 3) High reliability.
  • Construction Silicon epitaxial planer 0.8±0.05 ROHM : TUMD2 0.6±0.2 　　　 0.1 dot (year week factory) + day.
  • Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 　　　　　 0 1.9±0.1 2.5±0.2 0.8 0.5 2.0.
  • Land size figure (Unit : mm) 1.1 TUMD2.
  • Structure 0.25±0.05 1.75±0.1 3.5±0.05 2.75 8.0±0.2 2.8±0.05.
  • Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (D.

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Datasheet Details

Part number RB400VA-50
Manufacturer ROHM
File Size 952.53 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB400VA-50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet Schottky Barrier Diode RB400VA-50 Applications General rectification Dimensions (Unit : mm) 1.3±0.05 0.17±0.1 　　 0.05 Features 1) Small mold type. (TUMD2) 2) Low VF, Low IR. 3) High reliability. Construction Silicon epitaxial planer 0.8±0.05 ROHM : TUMD2 0.6±0.2 　　　 0.1 dot (year week factory) + day Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.1 　　　　　 0 1.9±0.1 2.5±0.2 0.8 0.5 2.0 Land size figure (Unit : mm) 1.1 TUMD2 Structure 0.25±0.05 1.75±0.1 3.5±0.05 2.75 8.0±0.2 2.8±0.05 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz / 1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg 1.43±0.05 4.0±0.