ROHM Semiconductor RB411
Schottky barrier diode
| Part No. | RB411 |
|---|---|
| Datasheet | RB411 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky barrier diode |
| Buy | Stock & Price |
APPLICATIONS
Low power rectification For switching power supply !External dimensions (Units : mm) 2.9±0.2 1.9±0.2 0.95 0.95 0.2 1.1 + −0.1 0.8±0.1 (All leads have the same dimensions) !Construction Silicon epitaxial planar ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Circuit !Absolute maximum ratings (Ta = 25°C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current ∗ Junction temperature Storage temperature ∗ 60Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 40 20 0.5 3 125 −40~+125 Unit V V A A °C °C !Electrical characteristics (Ta = 25°C) Parameter Forward voltage Forward voltage Reverse current Capacitance between terminals Note) sensitive product handling required. Symbol VF1 VF2 IR CT Min. − − − − Typ. − − − 20 Max. 0.3 0.5 30 − Unit V V µA pF IF=10mA IF=500mA VR=10V Conditions VR=10V, f=1MHz 0.3~0.6 D3E !FEATURES
1) Small surface mounting type. (SMD3) 2) Low VF. (VF=0.43V Typ. at 0.5A) 3) High reliability. 0.2 1.6 + −0.1 2.8±0.2 0~0.1 +0.