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RB411 - Schottky barrier diode

Key Features

  • 1) Small surface mounting type. (SMD3) 2) Low VF. (VF=0.43V Typ. at 0.5A) 3) High reliability. 0.2 1.6 +.
  • 0.1 2.8±0.2 0~0.1 +0.1 0.4.
  • 0.05 +0.1 0.15.
  • 0.06 RB411D Diodes !Electrical characteristic curves (Ta = 25°C) Ta=125°C 100m Ta =12 Ta= 5°C 75 ° C Ta =2 Ta =.
  • 2 5 ° C 5°C 1m Ta=75°C.

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Datasheet Details

Part number RB411
Manufacturer ROHM
File Size 55.23 KB
Description Schottky barrier diode
Datasheet download datasheet RB411 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RB411D Diodes Schottky barrier diode RB411D !Applications Low power rectification For switching power supply !External dimensions (Units : mm) 2.9±0.2 1.9±0.2 0.95 0.95 0.2 1.1 + −0.1 0.8±0.1 (All leads have the same dimensions) !Construction Silicon epitaxial planar ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Circuit !Absolute maximum ratings (Ta = 25°C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current ∗ Junction temperature Storage temperature ∗ 60Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 40 20 0.5 3 125 −40~+125 Unit V V A A °C °C !Electrical characteristics (Ta = 25°C) Parameter Forward voltage Forward voltage Reverse current Capacitance between terminals Note) sensitive product handling required.