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RB400VAM-50 - Schottky Barrier Diode

Key Features

  • Small mold type (TUMD2M) 2) High reliability 3) Low VF and low IR 2.0±0.1 2.5±0.1 0～0.1 (2) ROHM : TUMD2M Manufacture date and factory TUMD2M.
  • Structure (1)Cathode.
  • Construction Silicon epitaxial planar type.
  • Taping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 4.0±0.1 Φ1.5+-00.1 (2) Anode 0.25±0.05 1.75±0.1 3.5±0.05 8.0±0.2 5.5±0.2 2.8±0.05 1.53±0.03 Φ1.0+-00.2 0.9±0.08.
  • Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive Peak R.

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Datasheet Details

Part number RB400VAM-50
Manufacturer ROHM
File Size 772.80 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB400VAM-50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode RB400VAM-50 Datasheet Application General rectification Dimensions (Unit : mm) 1.4±0.1 0.8±0.05 0.17±0.04 0.6±0.1 Land Size Figure (Unit : mm) 1.1 0.8 0.5 2.0 (1) Features 1) Small mold type (TUMD2M) 2) High reliability 3) Low VF and low IR 2.0±0.1 2.5±0.1 0～0.1 (2) ROHM : TUMD2M Manufacture date and factory TUMD2M Structure (1)Cathode Construction Silicon epitaxial planar type Taping Dimensions (Unit : mm) 2.0±0.05 4.0±0.1 4.0±0.1 Φ1.5+-00.1 (2) Anode 0.25±0.05 1.75±0.1 3.5±0.05 8.0±0.2 5.5±0.2 2.8±0.05 1.53±0.03 Φ1.0+-00.2 0.9±0.08 Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit Repetitive Peak Reverse Voltage VRM Duty≦0.