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RF501BGE2S - Super Fast Recovery Diode

Key Features

  • 1) Low switching loss 2) Low forward voltage.
  • Construction Silicon epitaxial planar type ROHM : TO-252GE JEITA : - TO-252 2.3 2.3.
  • Structure Cathode.
  • Taping specifications (Unit : mm) Open Anode.
  • Absolute maximum ratings (at Ta= 25°C unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage Reverse voltage Average rectified foward current Peak forward surge current Junction temperature VRM Duty≦0.5 VR Reverse direct voltag.

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Datasheet Details

Part number RF501BGE2S
Manufacturer ROHM
File Size 1.23 MB
Description Super Fast Recovery Diode
Datasheet download datasheet RF501BGE2S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Super Fast Recovery Diode RF501BGE2S Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 3.0 2.0 6.0 Application General rectification 1.6 1.6 Features 1) Low switching loss 2) Low forward voltage Construction Silicon epitaxial planar type ROHM : TO-252GE JEITA : - TO-252 2.3 2.3 Structure Cathode Taping specifications (Unit : mm) Open Anode Absolute maximum ratings (at Ta= 25°C unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage Reverse voltage Average rectified foward current Peak forward surge current Junction temperature VRM Duty≦0.