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RF501BM2S - Super Fast Recovery Diode

Key Features

  • 1) Low switching loss 2) Low forward voltage.
  • Construction Silicon epitaxial planar type ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date.
  • Taping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3.
  • Structure Cathode Open Anode.
  • Absolute Maximum Ratings (Ta= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 200 V Reverse voltage VR Direct voltage 200 V Average rectified foward current Io 60Hz half sin wave , Resistive load 5.

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Datasheet Details

Part number RF501BM2S
Manufacturer ROHM
File Size 1.21 MB
Description Super Fast Recovery Diode
Datasheet download datasheet RF501BM2S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Super Fast Recovery Diode RF501BM2S Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) Land Size Figure (Unit : mm) 6.0 3.0 2.0 6.0 Application General rectification 1 Features 1) Low switching loss 2) Low forward voltage Construction Silicon epitaxial planar type ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date Taping Dimensions (Unit : mm) 1.6 1.6 TO-252 2.3 2.3 Structure Cathode Open Anode Absolute Maximum Ratings (Ta= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.