RF601T2DNZ
Overview
- 2 1.3 0.8 (1) (2) (3)
- 45±0.5 2.45±0.5 ROHM : TO220FN
- 0±0.5
- 6±0.5
- 75±00..015 1 Manufacture date lStructure (1) (2) (3) Anode Cathode Anode lConstruction Silicon epitaxial planar type lPackage Dimensions (Unit : mm) 7 540
- 5 lAbsolute Maximum Ratings (Ta= 25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average forward rectified current Non-repetitive forward surge current VRM VR Io IFSM Operating junction temperature Storage temperature Tj Tstg Conditions Duty≦0.5 Direct reverse voltage 60Hz half sin wave, resistive load, 1/2 IO per diode 60Hz half sin wave, one cycle non-repetitive at Tj=25°C, per diode - - Limits Uni
