mon type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss
10.0±0.3 0.1
2.8±0.2 0.1
(1) (2) (3)
①
1.2 1.3 0.8 (1) (2) (3)
5.0±0.2.
Construction Silicon epitaxial planar
8.0±0.2 12.0±0.2
13.5MIN
15.0±0.4 0.2 8.0 0.7±0.1 0.05
2.6±0.5
ROHM : TO220FN ① Manufacture Date.
Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
Fast recovery diode
RF601T2D
Applications General rectification Dimensions (Unit : mm) Structure
4.5±0.3 0.1
Features 1) Cathode common type.(TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss
10.0±0.3 0.1
2.8±0.2 0.1
(1) (2) (3)
①
1.2 1.3 0.8 (1) (2) (3)
5.0±0.2
Construction Silicon epitaxial planar
8.0±0.2 12.0±0.2
13.5MIN
15.0±0.4 0.2 8.0 0.7±0.1 0.05
2.6±0.