ROHM Semiconductor RF601T2D
Fast Recovery Diode
| Part No. | RF601T2D |
|---|---|
| Datasheet | RF601T2D Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Fast Recovery Diode |
| Buy | Stock & Price |
APPLICATIONS
General rectification●Dimensions (Unit : mm)
●Structure 4.5±0.3 0.1
●
FEATURES
1) Cathode common type.(TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss 10.0±0.3 0.1 2.8±0.2 0.1 (1) (2) (3) ① 1.2 1.3 0.8 (1) (2) (3) 5.0±0.2●Construction Silicon epitaxial planar 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 0.2 8.0 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date
●Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Reverse voltage (repetitive peak) 200 VRM Reverse voltage (DC) 200 VR Average rectified forward current (*1) 6 Io Forward current surge peak (60Hz/1cyc) 60 IFSM Junction temperature 150 Tj Storage temoerature -55 to +150 Tstg (*1)Business frequency, Rating of R-load, Tc=132CMAX. 1/2 Io per diode Unit V V A A C C
●Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR Min. - Typ. 0.87 0.01 18 Max. 0.93 10 25 Unit V μA ns Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR trr ©2010 ROHM Co., Ltd.
