Click to expand full text
RFN1VW M2S
Ultra Fast Recovery Diode
VR Io IFSM trr(Typ.)
200
V
1
A
20
A
14
ns
●Features Low forward voltage Low switching loss High current overload capacity
●Outline ●Inner Circuit
Data sheet
●Application
●Packaging Specifications
General rectification
Packing
Embossed Tape
Reel Size(mm)
180
●Structure
Taping Width(mm)
8
Quantity(pcs)
3000
Silicon epitaxial planar
Taping Code
TR
Marking
2F
●Absolute Maximum Ratings (Tc=25℃ unle s s oth e rw is e sp e cif ie d)
Parameter
Repetitive peak reverse voltage Reverse voltage
Symbol VRM VR
Conditions Duty≦0.