Rectron Semiconductor FMMT720
PNP SILICON POWER(SWITCHING) TRANSISTORS
ELECTRICAL CHARACTERISTICS
(Ta=25ć unless otherwise noted) Parameter Symbol Test Condition Collector-Base Breakdown Voltage VCBO IC=-100uA IE=0 Collector-Emitter Breakdown Voltage VCEO IC=-10mA IB=0 Emitter-Base Breakdown Voltage VEBO IE=-100uA IC=0 Collector Cutoff Current ICBO VCB=-35V IE=0 Collector Cutoff Current ICES VCB=-35V VBE=0V Emitter Cutoff Current IEBO VEB=-4V IC=0 HFE(1) VCE=-2V IC=-10mA HFE(2) VCE=-2V IC=-100mA DC Current Gain HFE(3) VCE=-2V IC=-1A HFE(4) VCE=-2V IC=-1.5A HFE(5) VCE=-2V IC=-3A IC=-0.1A IB=-10mA Collector-Emitter Saturation Voltage VCE(sat) IC=-1A IB=-50mA IC=-1.5A IB=-100mA Base-emitter Saturation Voltage VBE(sat) IC=-1.5A IB=-75mA Base-emitter Voltage VBE(on) VCE=-2V IC=-1.5mA transition frequency ft VCE=-10V IC=-50mA f 100MHZ Unit V V V A mW ć ć Min Max Unit V V V uA uA uA mV mV mV V V MHZ 2017-01 REV:O17 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes.