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RM3415 - P-Channel Enhancement Mode Power MOSFET

General Description

The RM3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Key Features

  • ƽ VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM ƽ High Power and current handing capability ƽ Lead free product is acquired ƽ Surface mount package.

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Datasheet Details

Part number RM3415
Manufacturer Rectron
File Size 291.28 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet RM3415 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RM3415 P-Channel Enhancement Mode Power MOSFET Description The RM3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ƽ VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM ƽ High Power and current handing capability ƽ Lead free product is acquired ƽ Surface mount package Application ƽ PWM application ƽ Load switch ● Halogen-free ● P/N suffix V means AEC-Q101 qualified, e.