Datasheet Summary
P-Channel Enhancement Mode Power MOSFET
Description
The RM3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
ƽ VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM
ƽ High Power and current handing capability ƽ Lead free product is acquired ƽ Surface mount package
Application
ƽ PWM application ƽ Load switch
- Halogen-free
- P/N suffix V means AEC-Q101 qualified, e.g:RM3415V
Package Marking and Ordering Information
Device Marking
Device
Device...