Datasheet4U Logo Datasheet4U.com

RM3415 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The RM3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Features

  • ƽ VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM ƽ High Power and current handing capability ƽ Lead free product is acquired ƽ Surface mount package.

📥 Download Datasheet

Datasheet preview – RM3415

Datasheet Details

Part number RM3415
Manufacturer Rectron
File Size 291.28 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet RM3415 Datasheet
Additional preview pages of the RM3415 datasheet.

📁 Similar Datasheet

Other Datasheets by Rectron
  • RM3400 - N-Channel Enhancement Mode Power MOSFET
  • RM3401 - P-Channel Enhancement Mode Power MOSFET
  • RM3075S8 - N and P-Channel Enhancement Mode Power MOSFET
  • RM30N250DF - N-Channel Enhancement Mode Power MOSFET
  • RM30P30D3 - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
RM3415 P-Channel Enhancement Mode Power MOSFET Description The RM3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ƽ VDS = -20V,ID =-4A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ESD Rating: 2500V HBM ƽ High Power and current handing capability ƽ Lead free product is acquired ƽ Surface mount package Application ƽ PWM application ƽ Load switch ● Halogen-free ● P/N suffix V means AEC-Q101 qualified, e.
Published: |