RM50N60IP Datasheet | Rectron

N-Channel Enhancement Mode Power MOSFET Description The RM50N60IP uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply 100% UIS TESTED! Pin assignment 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package 50N60 TO-251 Reel Size - TO-251 top view Tape width - Quantity -...