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RM50N60IP - N-Channel Enhancement Mode Power MOSFET

General Description

The RM50N60IP uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =60V,ID =50A RDS(ON).

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Datasheet Details

Part number RM50N60IP
Manufacturer Rectron
File Size 479.13 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet RM50N60IP Datasheet

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RM50N60IP N-Channel Enhancement Mode Power MOSFET Description The RM50N60IP uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.