RM5N800LD Datasheet | Rectron

RM5N800IP RM5N800LD N-Channel Super Junction Power MOSFETĊ General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ƽNew technology for high voltage device ƽLow on-resistance and low conduction losses ƽSmall package ƽUltra Low Gate Charge cause lower driving requirements ƽ100% Avalanche Tested ƽROHS pliant RDS(ON) TYPDŽ 1000 mΩ Application ƽ Power factor correction˄PFC˅ ƽ Switched mode power supplies(SMPS) ƽ Uninterruptible Power Supply˄UPS˅ Schematic diagram Package Marking And Ordering Information Device Device Package Marking RM5N800IP TO-251 5N800 TO-252 5N800 Table 1. Absolute M=aximum Ratings (TC=25ć) Para= meter Symbol Drain-Source Voltage (VGS 0V˅ Gate-Source Voltage (VDS 0V) Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) ID (DC) IDM (pluse) Maximum Power Dissipation(Tc=25ć) Derate above...