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RJK0855DPB - Silicon N-Channel Power MOSFET

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Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • High speed switching.
  • Low drive current.
  • Low on-resistance RDS(on) = 8.2 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • High density mounting Outline.

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Datasheet Details

Part number RJK0855DPB
Manufacturer Renesas Technology
File Size 146.89 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet RJK0855DPB Datasheet
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RJK0855DPB 80V, 30A, 11 m max. Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 8.2 m typ. (at VGS = 10 V)  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1056EJ0200 (Previous: REJ03G1884-0100) Rev.2.
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