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RJK0856DPB - N-Channel Power MOSFET

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Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

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Features

  • High speed switching.
  • Low drive current.
  • Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • High density mounting Outline.

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Datasheet Details

Part number RJK0856DPB
Manufacturer Renesas Technology
File Size 146.06 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RJK0856DPB Datasheet
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RJK0856DPB 80V, 35A, 8.9m max. Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V)  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1057EJ0200 (Previous: REJ03G1885-0100) Rev.2.
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