RJK6029DJA Key Features
- Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C)
- Low drive current
- High density mounting REJ03G1895-0100 Rev.1.00 Jun 18, 2010
- Part: RJK6029DJA
- Description: Silicon N Channel MOS FET High Speed Power Switching
- Manufacturer: Renesas
- Size: 106.32 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| RJK6020DPK | Silicon N Channel MOSFET High Speed Power Switching |
| RJK6022DJE | Silicon N Channel MOSFET High Speed Power Switching |
| RJK6024DP3-A0 | High Speed Power Switching MOS FET |
| RJK6024DPD | Silicon N Channel MOS FET High Speed Power Switching |
| RJK6025DPE | Silicon N Channel MOS FET High Speed Power Switching |