RJK6029DJA Overview
Datasheet RJK6029DJA Silicon N Channel MOS FET High Speed Power Switching.
RJK6029DJA Key Features
- Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C)
- Low drive current
- High density mounting REJ03G1895-0100 Rev.1.00 Jun 18, 2010