RJL6014DPP Key Features
- Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)
- Low on-resistance RDS(on) = 0.52 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C)
- Low leakage current
- High speed switching
- Part: RJL6014DPP
- Description: Silicon N Channel MOS FET
- Manufacturer: Renesas
- Size: 139.36 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| RJL6012DPE | Silicon N Channel MOS FET High Speed Power Switching |
| RJL6013DPP | Silicon N Channel MOS FET High Speed Power Switching |
| RJL6015DPK | Silicon N Channel MOS FET High Speed Power Switching |
| RJL6018DPK | Silicon N Channel MOS FET High Speed Power Switching |
| RJL6020DPK | Silicon N-Channel MOSFET |