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RJL6020DPK
Silicon N Channel MOS FET High Speed Power Switching
Features
• Built-in fast recovery diode • Low on-resistance
RDS(on) = 0.17 Ω typ. (at ID = 15 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
D
1 2 3
G S
REJ03G1618-0300 Rev.3.00
Jan 22, 2010
1. Gate 2. Drain (Flange) 3. Source
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C 3.
RJL6020DPK Datasheet
