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RJL60S5DPE - 600V - 20A - SJ MOS FET

Description

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Features

  • Superjunction MOSFET.
  • Built-in fast recovery diode.
  • Low on-resistance RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C).
  • High speed switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Outline.

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Datasheet Details

Part number RJL60S5DPE
Manufacturer Renesas Technology
File Size 105.94 KB
Description 600V - 20A - SJ MOS FET
Datasheet download datasheet RJL60S5DPE Datasheet
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Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching Features  Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 1. Gate 2. Drain 3. Source 4. Drain D G 1 2 3 S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Limited by Tch max. 2. Value at Tc = 25C 3. STch = 25C, Tch  150C www.DataSheet.
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