RJL60S5DPE Datasheet | Renesas

Preliminary Datasheet 600V - 20A - SJ MOS FET High Speed Power Switching Features - Superjunction MOSFET - Built-in fast recovery diode - Low on-resistance RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C) - High speed switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 1. Gate 2. Drain 3. Source 4. Drain G 1 2 3...