RQK0606KGDQA
RQK0606KGDQA is manufactured by Renesas.
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Silicon N Channel MOS FET Power Switching
REJ03G1497-0100 Rev.1.00 Jan 15, 2007
Features
- Low on-resistance RDS(on) = 173 mΩ typ.(at VGS = 4.5 V, ID = 0.8 A)
- Low drive current
- High speed switching
- VDSS ≥ 60 V and capable of 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D
3 1 2
2 G
1. Source 2. Gate 3. Drain
S 1
Notes: Marking is...
