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RQK0608BQDQS
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 120 mΩ typ.(at VGS = 4.5 V, ID = 1.6 A)
• Low drive current • High speed switching • VDSS : 60 V and capable of 2.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
1 2 3
4
1G
Note: Marking is “BQ“.
REJ03G1621-0100 Rev.1.00
Mar 03, 2008
2, 4 D
1. Gate 2. Drain 3. Source 4. Drain S 3
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation
VDSS
VGSS
ID ID(pulse) Note1
IDR Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2.
RQK0608BQDQS Datasheet
