Datasheet Summary
Silicon N Channel MOS FET Power Switching
Features
- Low on-resistance RDS(on) = 120 mΩ typ.(at VGS = 4.5 V, ID = 1.6 A)
- Low drive current
- High speed switching
- VDSS : 60 V and capable of 2.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
1 2 3
1G
Note: Marking is “BQ“.
REJ03G1621-0100 Rev.1.00
Mar 03, 2008
2, 4 D
1. Gate 2. Drain 3. Source 4. Drain S...