RQK0603CGDQS Description
RQK0603CGDQS Silicon N Channel MOS FET Power Switching.
RQK0603CGDQS Key Features
- Low on-resistance RDS(on) = 205 mΩ typ (VGS = 10 V, ID = 1.4 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
- UPAK is a trademark of Renesas Technology Corp