Datasheet Summary
Silicon N Channel MOS FET Power Switching
Features
- Low on-resistance RDS(on) = 205 mΩ typ (VGS = 10 V, ID = 1.4 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
1 2 3
Note: Marking is “CG”.
REJ03G0577-0400 Rev.4.00
Jun 22, 2006
2, 4 D
1. Gate 1 G 2. Drain
3. Source 4. Drain S 3
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