Datasheet4U Logo Datasheet4U.com

RQK0605JGDQA - N-Channel MOSFET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A).
  • Low drive current.
  • High speed switching.
  • 4.5 V gate drive Outline.

📥 Download Datasheet

Datasheet preview – RQK0605JGDQA

Datasheet Details

Part number RQK0605JGDQA
Manufacturer Renesas
File Size 78.87 KB
Description N-Channel MOSFET
Datasheet download datasheet RQK0605JGDQA Datasheet
Additional preview pages of the RQK0605JGDQA datasheet.

📁 Similar Datasheet

  • RQK0604IGDQA - Silicon N-Channel MOSFET (Renesas Technology)
  • RQK0606KGDQA - Silicon N Channel MOS FET Power Switching (Renesas Technology)
Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
RQK0605JGDQA Silicon N Channel MOS FET Power Switching Features  Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A)  Low drive current  High speed switching  4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “JG”. Preliminary Datasheet R07DS0309EJ0500 (Previous: REJ03G1278-0400) Rev.5.00 Mar 28, 2011 3 D G 1. Source 2 2. Gate 3. Drain S 1 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(Pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW  10 s, duty cycle  1% 2.
Published: |