Datasheet Summary
Silicon N Channel MOS FET Power Switching
Features
- Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
1 2
Note: Marking is “JG”.
Preliminary Datasheet
R07DS0309EJ0500 (Previous: REJ03G1278-0400)
Rev.5.00 Mar 28, 2011
3 D
G 1. Source 2 2. Gate
3. Drain S...