RQK0601AGDQS Description
RQK0601AGDQS Silicon N Channel MOS FET Power Switching.
RQK0601AGDQS Key Features
- Low on-resistance RDS(on) = 56 mΩ typ (VGS = 10 V, ID = 2.5 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
- UPAK is a trademark of Renesas Technology Corp