Datasheet Summary
Silicon N Channel MOS FET Power Switching
Features
- Low on-resistance RDS(on) = 212 mΩ typ (VGS = 10 V, ID = 1 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
1 2
Note: Marking is “CG”.
Preliminary Datasheet
R07DS0307EJ0600 Rev.6.00
Jan 10, 2014
3 D
G 1. Source 2 2. Gate
3. Drain S...