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2SD2383 - NPN Transistor

General Description

The 2SD2383 is an element realizing high voltage in small dimension.

This transistor is ideal for downsizing sets requiring high voltage.

Key Features

  • High voltage.
  • Small dimension.

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Datasheet Details

Part number 2SD2383
Manufacturer Renesas
File Size 171.49 KB
Description NPN Transistor
Datasheet download datasheet 2SD2383 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SD2383 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING DESCRIPTION The 2SD2383 is an element realizing high voltage in small dimension. This transistor is ideal for downsizing sets requiring high voltage. FEATURES • High voltage • Small dimension ORDERING INFORMATION PART NUMBER 2SD2383 Marking: N1 PACKAGE SC-59 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 400 V Collector to Emitter Voltage VCEO 300 V Emitter to Base Voltage VEBO 5.0 V Collector Current (DC) IC(DC) 20 mA Total Power Dissipation PT 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C PACKAGE DRAWING (Unit: mm) +0.1 –0.05 2.8 ±0.2 1.5 0.65 +0.1 –0.15 0.4 2 2.9 ±0.2 0.95 0.95 +0.1 –0.05 0.