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2SD2655 - Silicon NPN epitaxial planer type Transistor

General Description

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Key Features

  • Small size package: MPAK (SC.
  • 59A).
  • Large Maximum current: IC = 1 A.
  • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max. (at IC/IB = 0.5 A/0.05 A).
  • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)).
  • Complementary pair with 2SB1691 Outline.

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Datasheet Details

Part number 2SD2655
Manufacturer Renesas
File Size 103.09 KB
Description Silicon NPN epitaxial planer type Transistor
Datasheet download datasheet 2SD2655 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier Preliminary Datasheet R07DS0281EJ0400 Rev.4.00 Jan 10, 2014 Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = 1 A • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair with 2SB1691 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 Note: Marking is “WM-“. 1 2 1. Emitter 2. Base 3.